Polyera Corporation

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General Information

Material Name: ActivInk^TM N0400

Chemical Structure: DFCO-4T

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Orange solid

Solubility: Chloroform, dichlorobenzene

Crystallization Motif: Herringbone

Melting Point: 291-294°C

Shelf Lifetime: Stable

Electronic Properties

Optical Absorption (λ max.): 455 nm

HOMO / LUMO (By CV): 5.8 / 3.4

Bandgap: 2.4eV

Typical Device Data

Carrier Mobility:
Deposition Method            Mobility                          Device Stack
Vapor                                   0.1 – 0.45 cm²/Vs          TCBG Si / SiO₂-HMDS / Au/ L=50μm
Drop-Cast                             0.1 – 0.3 cm²/Vs            TCBG Si / SiO₂-HMDS / Au/ L=50μm

Turn-On Voltage: 10 - 30V

On/Off Ratio: 1.0 x 1.0^5-7

Device Shelf Life: Good

Recommended Contact Type(s): Au, but will work with others

FET Transfer Characteristic

Vapor                                                       Drop-Cast



Coming Soon


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General Information

Material Name: ActivInk^TM N0700

Chemical Structure: DHF-4T

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Orange solid

Solubility: Chloroform, dichlorobenzene

Crystallization Motif: Herringbone

Melting Point: 213°C

Electronic Properties

Optical Absorption (λ max.): 398nm

HOMO / LUMO (By CV): 6.2 / 3.3

Abs. Coefficient: 3.9x10⁴

Bandgap: 2.8eV

Typical Device Data

Carrier Mobility:
Deposition Method            Mobility                    Device Stack
Vapor                                 0.05 – 0.2 cm²/Vs       TCBG Si / SiO2-HMDS / Au / L=50μm

Turn-On Voltage: 10 - 30V

On/Off Ratio: 1.0 x 10^5-6

Device Shelf Life: Good

Recommended Contact Type(s): Au, but will work with others.

FET Transfer Characteristic

Vapor                                                    

Coming Soon

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General Information

Material Name: ActivInk^TM N0800

Chemical Structure: DFHCO-4T

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Orange solid

Solubility: Chloroform, dichlorobenzene

Crystallization Motif: Herringbone

Melting Point: 248°C

Electronic Properties

Optical Absorption (λ max.): 461nm

HOMO / LUMO (By CV): 6.4 / 4.0

Abs. Coefficient: No Data

Bandgap: 2.4eV

Typical Device Data

Carrier Mobility:
Deposition Method             Mobility                  Device Stack
Vapor                                  0.5 – 4.0 cm²/Vs      TCBG Si / SiO2-HMDS(PS) / Au / L=50μm

Turn-On Voltage: 10 - 30V

On/Off Ratio: 1.0 x 10^5-8

Device Shelf Life: Good

Recommended Contact Type(s): Au, but will work with others.

Device Yield / Reproducibility: Good

FET Transfer Characteristic

Vapor

Coming Soon

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General Information

Material Name: ActivInk^TM N0900

Chemical Structure: DFH-6T

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Orange solid

Solubility: Insoluble

Melting Point: 309°C

Electronic Properties

Optical Absorption (λ max.): 443nm

HOMO / LUMO (By CV): 5.9 / 3.4

Abs. Coefficient: 5.0x10⁴

Bandgap: 2.4eV

Typical Device Data

Carrier Mobility:
Deposition Method            Mobility                         Device Stack
Vapor                                  0.01-0.02 cm²/Vs            TCBG Si / SiO₂-HMDS / Au / L=50μm

Turn-On Voltage: 30 - 40V

On/Off Ratio: 1.0 x 10^4-5

Device Shelf Life: Good

Recommended Contact Type(s): Au, but will work with others.

FET Transfer Characteristic

Vapor                                                    

Coming Soon

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General Information

Material Name: ActivInk^TM N1100

Chemical Structure: PDIF-CN2

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Red crystalline solid

Solubility: Chloroform, dichlorobenzene, Toluene, o-Xylene, Anisole, 1,4-Dioxane

Crystallization Motif: Slipped-stacked

Melting Point: 302°C

Electronic Properties

Optical Absorption (λ max.): 527nm

HOMO / LUMO (By CV): 6.6 / 4.5

Abs. Coefficient: 1.0x10⁵

Bandgap: 2.1eV

Typical Device Data

Carrier Mobility:
Deposition Method            Mobility                     Device Stack
Vapor                                 0.3 – 0.6 cm²/Vs          TCBG Si / SiO2-HMDS / Au / L=50μm
Spin-Coat                            0.1 – 0.2 cm²/Vs          TCBG Si / SiO2-HMDS or -OTS / Au / L=50μm

Turn-On Voltage: -30 - -10V

On/Off Ratio: 1.0 x 10^3-4

Device Shelf Life: Excellent

Recommended Contact Type(s): Au, but will work with others.

FET Transfer Characteristic

Spin-Coat

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General Information

Material Name: ActivInk^TM N1200

Chemical Structure: PDI8-CN2

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Dark red solid

Solubility: Chloroform, dichlorobenzene,(heating to 80 ˚C: o-xylene, anisole, 1,4-dioxane)

Crystallization Motif: Slipped-stacked

Melting Point: 300°C

Electronic Properties

Optical Absorption (λ max.): 527nm

HOMO / LUMO (By CV): 6.4 / 4.3

Abs. Coefficient: 1.0x10⁵

Bandgap: 2.1eV

Typical Device Data

Carrier Mobility:
Deposition Method          Mobility                         Device Stack
Vapor                                0.1 – 0.2 cm²/Vs             TCBG Si / SiO2-OTS / Au / L=50μm
Spin-Coat                           0.01 – 0.05 cm²/Vs         TCBG Si / SiO2-OTS / Au / L=50μm
Inkjet                                0.005 – 0.05 cm²/Vs        TCBG & BCBG Glass / Au / diel. / Au / L=50μm

Turn-On Voltage: -10 - 0V

On/Off Ratio: 1.0 x 10^3-4

Device Shelf Life: Excellent

Recommended Contact Type(s): Au, but will work with others.

FET Transfer Characteristic

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General Information

Material Name: ActivInk^TM N1400

Chemical Structure: PDIR-CN2

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Red crystalline solid

Solubility: Chloroform, dichlorobenzene, anisole,(heating to 80˚C: toluene, o-xylene, 1,4-dioxane)

Melting Point: 300°C

Electronic Properties

Optical Absorption (λ max.): 530 nm

HOMO / LUMO (By CV): 6.4 / 4.3

Abs. Coefficient: 1.0x10⁵

Bandgap: 2.1eV

Typical Device Data

Carrier Mobility:
Deposition Method                  Mobility                Device Stack
Vapor                                       0.1 – 0.2 cm2/Vs     TCBG Si / SiO2-OTS / Au / L = 50μm
Spin-Coat                                  0.1 – 0.4 cm2/Vs     TCBG Si / SiO2-OTS / Au / L = 50μm
Spin-Coat                                  0.02 – 0.05 cm2/Vs  BCTG Glass / Au / dielec. / Au / L = 50μm

Turn-On Voltage: -10 - 0V

On/Off Ratio: 1.0 x 10^4-5

Device Shelf Life: Excellent

Recommended Contact Type(s): Au, but will work with others.

Recommended Dielectric(s): ActivInk™ D2500 (TG arch.)

FET Transfer Characteristic

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General Information

Material Name: ActivInk^TM N1500

Chemical Structure: Confidential

Can Publish Results: No

Purity: > 99.5%

Physical Properties

Physical Description: Red crystalline solid

Solubility: Confidential

Melting Point: Confidential

Electronic Properties

Optical Absorption (λ max.): Confidential

HOMO / LUMO (By CV): Confidential

Abs. Coefficient: Confidential

Bandgap: Confidential

Typical Device Data

Carrier Mobility:
Deposition Method            Mobility                       Device Stack
Vapor                                  0.5 – 1.0 cm²/Vs           TCBG Si / SiO2-HMDS / Au / L=50μm
Spin-coat                             1.0 – 1.5 cm²/Vs            BCTG Glass(PET) / Au / dielec. / Au / L=50μm
Inkjet                                  Up to 1.0 cm²/Vs           BCTG Glass(PET) / Au / dielec. / Au / L=50μm

Turn-On Voltage: -5 - 0V

On/Off Ratio: 1.0 x 10^5-7

Device Shelf Life: Excellent

Operating Lifetime‡: Confidential

Recommended Contact Type(s): Au, but will work with others.

Stability: Excellent stability in ambient conditions

Handling: Stable in ambient conditions. Store in dark bottles.

FET Transfer Characteristic

* Pulse bias stress is measured by holding Vsd = 40V, and cycle Vgs from -40V to +40V at 1Hz. Operational
lifetime is quoted as the number of cycles at which Ion, t = .70*Ion, t=0

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General Information

Material Name: ActivInk^TM N2200

Chemical Structure: P(NDI2OD-T2)

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Dark blue solid

Solubility: Chloroform, dichlorobenzene,toluene, xylene, anisole

Melting Point: 308°C (DSC transition temperature)

PDI: 3-6       Mw: 100-150 K Da

Electronic Properties

Optical Absorption (λ max.): 700 nm

HOMO / LUMO (By CV): 5.6 / 4.0

Abs. Coefficient: 3.0 x 10⁴

Bandgap: 1.5eV

Typical Device Data

Carrier Mobility:
Deposition Method                Mobility                  Device Stack
Spin-coat                                 0.1 – 0.8 cm2/Vs      BCTG Glass (PET) / Au / dielec. / Au / L=50μm
Gravure                                   0.1 – 0.5 cm2/Vs      BCTG PET / Au / dielec. / Au / L=50μm
Inkjet                                      0.1 – 0.2 cm2/Vs      BCTG Glass (PET) / Au / dielec. / Au / L=50μm

Turn-On Voltage: 0 – 10 V

On/Off Ratio: 1.0 x 10^5-8

Device Shelf Life: Excellent

Recommended Contact Type(s): Au, but will work with others.

Recommended Dielectric(s): ActivInks™ D2400 or D2500

FET Transfer Characteristic

Spin Coat                                                     Gravure

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General Information

Material Name: ActivInk^TM N3000

Chemical Structure: Confidential

Can Publish Results: No

Purity: > 99.5%

Physical Properties

Physical Form: Red solid

Solubility: Soluble in a variety of solvents (chlorinated and non-chlorinated)

Melting Point: Confidential

Electronic Properties

Optical Absorption (λ max.): Confidential

HOMO / LUMO (By CV): Confidential

Abs. Coefficient: Confidential

Bandgap: Confidential

Typical Device Data

Carrier Mobility:
Deposition Method            Mobility              Device Stack
Vapor                                 1.0 cm²/Vs           TCBG Si / SiO2-OTS / Au / L=50μm
Spin-Coat                            2.0 – 2.5 cm²/Vs   BCTG Glass(PET) / Au / dielec. / Au / L=50μm
Inkjet                                 2.0 – 2.5 cm²/Vs   BCTG Glass(PET) / Au / dielec. / Au / L=50μm

Turn-On Voltage: ~0 V

On/Off Ratio: 1.0 x 10^5-7

Device Shelf Life: Excellent

Est. Operating Lifetime: Exceptional stress stability^‡

Recommended Contact Type(s): Au, but will work with others.

FET Transfer Characteristic

^‡Pulse bias stress is measured by holding V_sd = 40V, and cycle V_gs from -40V to +40V at 1Hz. After 500,000 cycles, the devices exhibit less than a 2% shift in I_on and less than a 2V shift in V_on.

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General Information

Material Name: ActivInk^TM P0300

Chemical Structure: isoDH-6T

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Orange solid

Solubility: Chloroform, dichlorobenzene

Melting Point: 137°C

Electronic Properties

Optical Absorption (λ max.): 429nm

HOMO / LUMO (By CV): 5.8 / 3.0

Abs. Coefficient: 5.4x10⁴

Bandgap: 2.6eV

Typical Device Data

Carrier Mobility:
Deposition Method           Mobility                      Device Stack
Spin-coat                            0.01 – 0.1 cm2/Vs        TCBG Si /SiO2-HMDS / Au/ L = 50μm

Turn-On Voltage: -10 - 0V

On/Off Ratio: 1.0 x 10^4-5

Device Shelf Life: Good

Recommended Contact Type(s): Au, but will work with others.

FET Transfer Characteristic

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General Information

Material Name: ActivInk^TM P0400

Chemical Structure: DH-4T

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Form: Yellow solid

Solubility: Chloroform, dichlorobenzene, Toluene, o-Xylene, Anisole, 1,4-Dioxane

Melting Point: 184°C

Electronic Properties

Optical Absorption (λ max.): 402nm

HOMO / LUMO (By CV): 5.8 / 2.9

Abs. Coefficient: 4.0x10⁴

Bandgap: 2.8eV

Typical Device Data

Carrier Mobility:
Deposition Method            Mobility              Device Stack
Drop-cast                           0.01 cm2/Vs          TCBG Si / SiO2-HMDS / Au / L = 50μm
Vapor                                0.05 cm2/Vs          TCBG Si / SiO2-HMDS / Au / L = 50μm

Turn-On Voltage: ~0V

On/Off Ratio: 1.0 x 10^4-6

Device Shelf Life: Good

Recommended Contact Type(s): Au, but will work with others.

FET Transfer Characteristic

Spin-Coat                                  Inkjet

Coming soon

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General Information

Material Name: ActivInk^TM P1100

Chemical Structure: DS6T2

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Purple solid

Solubility: Chloroform, dichlorobenzene, THF

Melting Point: 300°C (DSC Transition)

Electronic Properties

Optical Absorption (λ max.): 544nm

HOMO / LUMO (By CV): 5.2 / 3.3

Abs. Coefficient: No Data

Bandgap: 1.9 eV

Typical Device Data

Carrier Mobility:
Deposition Method            Mobility                   Device Stack
Spin-coat                             0.05 – 0.1 cm²/Vs     TCBG Si /SiO₂-HMDS / Au / L = 50μm

Turn-On Voltage: -5 - 5V

On/Off Ratio: 1.0 x 10^5-7

Device Shelf Life: Good

Recommended Contact Type(s): Au, but will work with others.

FET Transfer Characteristic

Coming soon

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General Information

Material Name: ActivInk^TM P1200

Chemical Structure: DS6T1

Can Publish Results: Yes

Purity: > 99.5%

Physical Properties

Physical Description: Purple solid

Solubility: Chloroform, dichlorobenzene, THF

Melting Point: 257°C (DSC)

Electronic Properties

Optical Absorption (λ max.): 521 nm

HOMO / LUMO (By CV): 5.3 / 3.5

Abs. Coefficient: N/A

Bandgap: 1.8 - 2.0eV

Typical Device Data

Carrier Mobility:
Deposition Method               Mobility                      Device Stack
Spin-Coat                               0.05 – 0.1 cm²/Vs         TCBG Si / SiO₂-HMDS / Au / L = 50μm

Turn-On Voltage: ~0V

On/Off Ratio: 1.0 x 10^4-5

Device Shelf Life: Good

Recommended Contact Type(s): Au, but will work with others.

FET Transfer Characteristic

Coming soon

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General Information

Material Name: ActivInk^TM P2100

Chemical Structure: Confidential

Can Publish Results: No

Purity: > 99.5%

Physical Properties

Physical Description: Brown solid

Solubility: Confidential

Melting Point: Confidential

Electronic Properties

Optical Absorption (λ max.): Confidential

HOMO / LUMO (By CV): Confidential

Abs. Coefficient: Confidential

Bandgap: Confidential

Typical Device Data

Carrier Mobility:
Deposition Method             Mobility                   Device Stack
Spin-coat                             1.0 – 2.0 cm²/Vs        BCTG Glass(PET) / Au / dielec. / Au / L = 50μm
Inkjet                                  1.0         cm²/Vs       BCTG Glass(PET) / Au / dielec. / Au / L = 50μm

Turn-On Voltage: 0V

On/Off Ratio: 1.0 x 10^4-5

Device Shelf Life: Excellent

Recommended Contact Type(s): Au, but will work with others.

FET Transfer Characteristic

Coming soon

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General Information

Material Name: ActivInk^TM D1400

Chemical Structure: Confidential

Can Publish Results: No

Purity: > 99.5%

Physical Properties

Physical Description: White solid

Solubility: Confidential

Melting Point: Confidential

Curing Wavelength: 240-310nm

Cross-linking Dosage: 5-10 J/cm² at 300nm

Film-Deposition: Spin-Coat

Electronic Properties

Dielectric Constant κ: 3.5 - 4.0

Abs. Coefficient: Mostly transparent

Typical Device Data

Preferred Architecture: Bottom gate

Recommended Semiconductor Type: Small molecule, polymer

Typical Thickness: 400nm - 1μm

Leakage-Current Density: ~1 x 10⁸ at 2 MV/cm

Breakdown Field: 4 - 5 MV/cm

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General Information

Material Name: ActivInk^TM D2400

Chemical Structure: Confidential

Can Publish Results: No

Purity: N/A

Physical Properties

Physical Description: Formulation

Solubility: Confidential

Melting Point: Confidential

Curing Wavelength: N/A

Cross-linking Dosage: N/A

Electronic Properties

Dielectric Constant κ: 3.5 - 4.0

Abs. Coefficient: Mostly transparent

Typical Device Data

Preferred Architecture: Top gate

Recommended Semiconductor Type: Polymer

Typical Thickness: 400nm - 1μm

Copyright ©2009-Present Polyera Corporation. All Rights Reserved.

The First Complete Set of CMOS-Enabling Organic Materials

The benefits of complementary organic semiconductor (or COS) circuitry are well known, including simpler circuit design, lower power consumption, and better performance. Now - built on our breakthrough research in semiconductor and dielectric research - Polyera is proud to introduce the first-ever complete set of high-performance, user-friendly functional materials specifically designed to enable COS circuitry:  COS1000.

The Set Includes:

• N- AND P-type materials with printed μ > 1.0
• Excellent uniformity, shelf stability, & operational lifetime
• A single, high-performance dielectric matched to both

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