Polyera Receives $305,000 Award from the FlexTech Alliance
27 January 2010 — Polyera has been granted a $305,000 award from the FlexTech Alliance to continue development of its ActivInk® n-type organic semiconductor materials for use in organic thin-film transistors (OTFTs).
The project will focus on furthering Polyera’s state-of-the-art n-type results through continued increases in electron-carrier mobility, yield, and bias-stress stability. The project is being funded in response to an identified industry need for higher-performance, user-friendly n-type semiconductor materials and the crucial role they play in enabling organic complementary circuitry.
Complementary (historically CMOS) circuit design, which requires the use of both n- and p-type semiconductors, is the de facto circuit-design standard in the traditional electronics industry today, conferring a wide variety of benefits, including simpler circuit design, better performance, and lower power consumption. Novel high-performance, user-friendly organic semiconductors address the sensitivity, scalability, speed, and cost issues of traditional electronics, and will enable a new wave of electronics.
Michael Ciesinski, chief executive officer of the FlexTech Alliance, stated “Our Technical Council identified CMOS as a key market need in the flexible, printed electronics industry and Polyera is a pioneer in the development of n-types materials. The company has already achieved performances beyond what anyone thought possible just a few years ago. We believe that the CMOS-enabling products that Polyera will develop with the support of this grant will play a key role in enabling commercial flexible, printed electronic applications.”
"The highest-performing n-type currently available is our ActivInk™ N3000 material, with ink-jetted mobilities up to 2.5 cm^2/v-sec, but we are confident that we can achieve printed mobilities consistently above 4.0 in the near future,” said Antonio Facchetti, chief technology officer for Polyera. “In addition to creating a single material with the highest-possible performance, we will continue to improve our CMOS-enabling set of materials, of which a strong n-type is an integral part. The FlexTech award will definitely aid us towards that end.”
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Polyera Receives $305,000 Award from the FlexTech Alliance
27 January 2010 — Polyera has been granted a $305,000 award from the FlexTech Alliance to continue development of its ActivInk® n-type organic semiconductor materials for use in organic thin-film transistors (OTFTs).
8 November 2009 — Researchers at Stanford, PARC, and SSRL use Polyera ActivInkTM N1200 material to study the effects of grain-boundary orientation on charge transport, as published in Nature Materials this week.
1 October 2009 — Polyera Co-founder and Scientific Advisor Tobin J. Marks will be presented with the 2009 Von Hippel Award, the highest honor given by the Material Research Society.
